Microchip Technology Inc. has announced a major milestone in its with the completion of its radiation-hardened (rad-hard) power MOSFET family to the MIL-PRF-19500/746 slash-sheet specification. The highlight of this announcement is the JANSF qualification of its JANSF2N8587U3, a 100V N-channel MOSFET capable of withstanding 300 Krad (Si) Total Ionizing Dose (TID).
Microchip’s JANS rad-hard MOSFET family now covers a voltage range of 100–250V and extends to radiation hardness levels up to 100 Krad (Si), with new devices like the JANSF2N8587U3 pushing that limit to 300 Krad (Si). The devices are offered in multiple packaging options, including hermetically sealed ceramic for space-grade reliability and plastic packages using MIL-qualified JANSR die for cost-effective LEO and New Space missions.
Leon Gross, Corporate VP of the Discrete Products Group, said, “These achievements reflect Microchip’s commitment to advancing high-reliability power solutions. By leveraging our proprietary rad-hard-by-design technology, we continue to provide aerospace and defence customers with efficient, rugged solutions for mission-critical applications.”
These rad-hard MOSFETs are optimised for power conversion systems, including point-of-load converters, DC-DC converters, motor drives, and switching applications. With features such as low RDS(ON) and low total gate charge, the devices deliver enhanced efficiency, reduced heat, and improved switching performance over conventional components.
Microchip’s broader portfolio for aerospace and defence includes radiation-hardened MCUs, FPGAs, RF components, Ethernet PHYs, and timing solutions, along with Spice models for simulation and design support. With many offerings listed on the Qualified Products List (QPL), Microchip remains a key player in delivering space-grade and high-reliability electronics for mission-critical applications.
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