NXP Semiconductors has announced its collaboration with TSMC to deliver the industry’s first automotive-embedded MRAM (Magnetic Random Access Memory) in 16 nm FinFET technology.
As automakers transition to software-defined vehicles (SDVs), they need to support multiple generations of software upgrades on a single hardware platform. The companies said that this MRAM can update 20MB of code in less than three seconds compared to flash memories which take about a minute.
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“Moreover, MRAM provides a highly reliable technology for automotive mission profiles by offering up to one million update cycles, a level of endurance 10x greater than flash and other emerging memory technologies,” the official press release noted.
TSMC’s 16FinFET embedded MRAM technology will offer one-million cycle endurance, support for solder reflow, and 20-year data retention at 150°C.
Dr Kevin Zhang, Senior Vice President, Business Development, TSMC, said, “The innovators at NXP have always been quick to recognise the potential of TSMC’s new process technologies, especially for demanding automotive applications.”
Henri Ardevol, Executive Vice President and General Manager, Automotive Processing, NXP, added, “NXP’s successful collaboration with TSMC spans decades and has consistently delivered high-quality embedded memory technology to the automotive market.”